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MG400Q2YMS3(DAE)
SIC MOSFET, DUAL N-CH, 1.2KV/400A/MODULE
Image is for illustrative purposes only. Please refer to product description.
ManufacturerTOSHIBA
Manufacturer Part NoMG400Q2YMS3(DAE)Copy
Manufacturer Standard Lead Time34 weeks
Newark Part No.11AN6076
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 34 week(s)
| Quantity | Price |
|---|---|
| 1+ | $1,898.750 |
| 5+ | $1,860.780 |
| 10+ | $1,822.800 |
| 25+ | $1,784.830 |
Price for:Each
Minimum: 1
Multiple: 1
$1,898.75
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerTOSHIBA
Manufacturer Part NoMG400Q2YMS3(DAE)Copy
Manufacturer Standard Lead Time34 weeks
Newark Part No.11AN6076
MOSFET Module ConfigurationHalf Bridge
Channel TypeDual N Channel
Continuous Drain Current Id400A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance-
Transistor Case StyleModule
No. of Pins11Pins
Rds(on) Test Voltage-
Gate Source Threshold Voltage Max5.6V
Power Dissipation1.35kW
Operating Temperature Max150°C
Product Range-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
400A
Drain Source On State Resistance
-
No. of Pins
11Pins
Gate Source Threshold Voltage Max
5.6V
Operating Temperature Max
150°C
SVHC
No SVHC (25-Jun-2025)
Channel Type
Dual N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
Module
Rds(on) Test Voltage
-
Power Dissipation
1.35kW
Product Range
-
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability