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2SK3075(TE12L,Q)
RF FET Transistor, 30 V, 5 A, 20 W, 520 MHz, SMD
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ManufacturerTOSHIBA
Manufacturer Part No2SK3075(TE12L,Q)
Newark Part No.08AK8211
Your Part Number
Technical Datasheet
713 In Stock
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Product Information
ManufacturerTOSHIBA
Manufacturer Part No2SK3075(TE12L,Q)
Newark Part No.08AK8211
Technical Datasheet
Drain Source Voltage Vds30V
Continuous Drain Current Id5A
Power Dissipation20W
Operating Frequency Min-
Power Dissipation Pd20W
Operating Frequency Max520MHz
Transistor Case StyleSMD
RF Transistor CaseSMD
No. of Pins4Pins
Operating Temperature Max150°C
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
SVHCTo Be Advised
Technical Specifications
Drain Source Voltage Vds
30V
Power Dissipation
20W
Power Dissipation Pd
20W
Transistor Case Style
SMD
No. of Pins
4Pins
Channel Type
N Channel
Product Range
-
Continuous Drain Current Id
5A
Operating Frequency Min
-
Operating Frequency Max
520MHz
RF Transistor Case
SMD
Operating Temperature Max
150°C
Transistor Mounting
Surface Mount
SVHC
To Be Advised
Alternatives for 2SK3075(TE12L,Q)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate