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TQM210NH08LDCR RLG
MOSFET, DUAL, N-CH, 80V, 33A, PDFN56U
Image is for illustrative purposes only. Please refer to product description.
ManufacturerTAIWAN SEMICONDUCTOR
Manufacturer Part NoTQM210NH08LDCR RLGCopy
Manufacturer Standard Lead Time28 weeks
Newark Part No.12AN0576
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 28 week(s)
| Quantity | Price |
|---|---|
| 10+ | $1.720 |
| 25+ | $1.560 |
| 50+ | $1.390 |
| 100+ | $1.210 |
| 250+ | $1.040 |
| 500+ | $0.943 |
| 1000+ | $0.894 |
Price for:Each (Supplied on Cut Tape)
Minimum: 10
Multiple: 10
$17.20
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerTAIWAN SEMICONDUCTOR
Manufacturer Part NoTQM210NH08LDCR RLGCopy
Manufacturer Standard Lead Time28 weeks
Newark Part No.12AN0576
Channel TypeN Channel
Drain Source Voltage Vds N Channel80V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel33A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.021ohm
Drain Source On State Resistance P Channel-
Transistor Case StylePDFN56U
No. of Pins8Pins
Power Dissipation N Channel48W
Power Dissipation P Channel-
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
SVHC
No SVHC (04-Feb-2026)
Drain Source Voltage Vds N Channel
80V
Continuous Drain Current Id N Channel
33A
Drain Source On State Resistance N Channel
0.021ohm
Transistor Case Style
PDFN56U
Power Dissipation N Channel
48W
Operating Temperature Max
175°C
Qualification
AEC-Q101
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate