Print Page
STPSC2006CW
Silicon Carbide Schottky Diode, SiC, 600V Series, Dual Common Cathode, 600 V, 20 A, 12 nC, TO-247
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTPSC2006CW
Newark Part No.47T9398
Technical Datasheet
No Longer Available
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTPSC2006CW
Newark Part No.47T9398
Technical Datasheet
Product Range-
Diode ConfigurationDual Common Cathode
Repetitive Peak Reverse Voltage600V
Average Forward Current20A
Total Capacitive Charge12nC
Diode Case StyleTO-247
No. of Pins3 Pin
Operating Temperature Max175°C
Diode MountingThrough Hole
Qualification-
SVHCNo SVHC (17-Dec-2015)
Product Overview
The STPSC2006CW is a Power Schottky Silicon Carbide Diode features ultra high performance. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. ST SiC diode will boost the performance of PFC operations in hard switching conditions.
- No or negligible reverse recovery
- Switching behaviour independent of temperature
- Particularly suitable in PFC boost diode function
Applications
Industrial
Technical Specifications
Product Range
-
Repetitive Peak Reverse Voltage
600V
Total Capacitive Charge
12nC
No. of Pins
3 Pin
Diode Mounting
Through Hole
SVHC
No SVHC (17-Dec-2015)
Diode Configuration
Dual Common Cathode
Average Forward Current
20A
Diode Case Style
TO-247
Operating Temperature Max
175°C
Qualification
-
Technical Docs (3)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate