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STD60NF55LT4
Power MOSFET, N Channel, 55 V, 30 A, 0.012 ohm, TO-252 (DPAK), Surface Mount
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD60NF55LT4Copy
Manufacturer Standard Lead Time18 weeks
Newark Part No.
Re-Reel33R1172RL
Cut Tape33R1172
Your Part Number
935 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $2.100 | $2.10 |
| Total Price | $2.10 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $2.100 |
| 50+ | $1.390 |
| 100+ | $0.979 |
| 250+ | $0.891 |
| 500+ | $0.803 |
| 1000+ | $0.747 |
| 2500+ | $0.732 |
| 5000+ | $0.717 |
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD60NF55LT4Copy
Manufacturer Standard Lead Time18 weeks
Newark Part No.
Re-Reel33R1172RL
Cut Tape33R1172
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id30A
Drain Source On State Resistance0.012ohm
On Resistance Rds(on)0.012ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd110W
Gate Source Threshold Voltage Max2V
Power Dissipation110W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The STD60NF55LT4 is a STripFET™ II N-channel Power MOSFET developed using STMicroelectronics unique Single Feature Size™ strip-based process. The device has extremely high packing density for low On-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
- Low threshold drive
- -55 to 175°C Operating junction temperature range
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
30A
On Resistance Rds(on)
0.012ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
110W
Power Dissipation
110W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
55V
Drain Source On State Resistance
0.012ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate