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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD25NF10T4
Newark Part No.
Re-Reel33R1152
Cut Tape33R1152
Your Part Number
1,733 In Stock
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $1.890 | $1.89 |
| Total Price | $1.89 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $1.890 |
| 10+ | $1.260 |
| 25+ | $1.140 |
| 50+ | $1.010 |
| 100+ | $0.887 |
| 250+ | $0.809 |
| 500+ | $0.730 |
| 1000+ | $0.679 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD25NF10T4
Newark Part No.
Re-Reel33R1152
Cut Tape33R1152
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id12.5A
Drain Source On State Resistance33mohm
On Resistance Rds(on)0.033ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Power Dissipation Pd100W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation100W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The STD25NF10T4 is a STripFET™ II N-channel Power MOSFET specifically designed to minimize input capacitance and gate charge. It is suitable as primary switch in advanced high efficiency isolated DC-to-DC converters for telecom and computer applications. It is also intended for any application with low gate charge drive requirements.
- Exceptional dV/dt capability
- Application oriented characterization
- 100% Avalanche tested
- -55 to 175°C Operating junction temperature range
Applications
Power Management, Communications & Networking, Computers & Computer Peripherals, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
12.5A
On Resistance Rds(on)
0.033ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
100W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
33mohm
Transistor Case Style
TO-252 (DPAK)
Power Dissipation Pd
100W
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability
