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STB7NK80ZT4
MOSFET, N CHANNEL, 800V, 5.2A, D2PAK
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB7NK80ZT4
Newark Part No.33R1130
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 20 week(s)
| Quantity | Price |
|---|---|
| 1+ | $3.540 |
| 10+ | $2.750 |
| 25+ | $2.530 |
| 50+ | $2.310 |
| 100+ | $2.090 |
| 250+ | $1.960 |
| 500+ | $1.700 |
| 1000+ | $1.600 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$3.54
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB7NK80ZT4
Newark Part No.33R1130
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id2.6A
On Resistance Rds(on)1.5ohm
Drain Source On State Resistance1.5ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Power Dissipation Pd125W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.75V
Power Dissipation125W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The STB7NK80ZT4 is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications. This MOSFET complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products.
- 100% Avalanche tested
- Very low intrinsic capacitance
- Very good manufacturing repeatability
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
2.6A
Drain Source On State Resistance
1.5ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
125W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
800V
On Resistance Rds(on)
1.5ohm
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
125W
Gate Source Threshold Voltage Max
3.75V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
WARNINGProposition 65