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STB18NM80
MOSFET Transistor, N Channel, 17 A, 800 V, 0.25 ohm, 10 V, 4 V RoHS Compliant: Yes
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 15 week(s)
| Quantity | Price |
|---|---|
| 1+ | $6.150 |
| 10+ | $4.380 |
| 25+ | $4.040 |
| 50+ | $3.690 |
| 100+ | $3.350 |
| 250+ | $3.310 |
| 500+ | $3.270 |
| 1000+ | $3.100 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$6.15
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB18NM80
Newark Part No.94T3302
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id17A
On Resistance Rds(on)0.25ohm
Drain Source On State Resistance0.25ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd190W
Gate Source Threshold Voltage Max4V
Power Dissipation190W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
800V
On Resistance Rds(on)
0.25ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
17A
Drain Source On State Resistance
0.25ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
190W
Power Dissipation
190W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Alternatives for STB18NM80
2 Products Found
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
