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| Manufacturer | STMICROELECTRONICS |
|---|---|
| Manufacturer Part No | STB10NK60ZT4Copy |
| Manufacturer Standard Lead Time | 17 weeks |
| Newark Part No. | 33R1094 |
| Your Part Number | |
| Technical Datasheet |
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| Quantity | Price |
|---|---|
| 1+ | $5.440 |
| 10+ | $3.690 |
| 100+ | $2.700 |
| 500+ | $2.400 |
| 1000+ | $2.350 |
| 2500+ | $2.300 |
| 10000+ | $2.260 |
Price for:Each
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Product Information
| Manufacturer | STMICROELECTRONICS |
|---|---|
| Manufacturer Part No | STB10NK60ZT4Copy |
| Manufacturer Standard Lead Time | 17 weeks |
| Newark Part No. | 33R1094 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 600V |
| Continuous Drain Current Id | 4.5A |
| Drain Source On State Resistance | 0.65ohm |
| On Resistance Rds(on) | 0.65ohm |
| Transistor Case Style | TO-263 (D2PAK) |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 10V |
| Power Dissipation Pd | 115W |
| Gate Source Threshold Voltage Max | 3.75V |
| Power Dissipation | 115W |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
The STB10NK60ZT4 is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well-established strip based PowerMESH™ layout. In addition to a significant reduction in ON-resistance, this device is designed to ensure a high level of dV/dt capability for the most demanding applications.
- Extremely high dV/dt capability
- 100% Avalanche tested
Applications
Industrial, Power Management
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 4.5A |
| On Resistance Rds(on) | 0.65ohm |
| Transistor Mounting | Surface Mount |
| Power Dissipation Pd | 115W |
| Power Dissipation | 115W |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
| Drain Source Voltage Vds | 600V |
|---|---|
| Drain Source On State Resistance | 0.65ohm |
| Transistor Case Style | TO-263 (D2PAK) |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 3.75V |
| No. of Pins | 3Pins |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
Technical Docs (2)
Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Product traceability |
