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SH68N65DM6AG
MOSFET, DUAL N-CH, 650V/64A/ACEPACK SMIT ROHS COMPLIANT: YES
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSH68N65DM6AG
Newark Part No.11AN9215
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 21 week(s)
| Quantity | Price |
|---|---|
| 1+ | $34.150 |
| 10+ | $32.440 |
| 25+ | $30.400 |
| 50+ | $28.770 |
| 100+ | $26.950 |
| 250+ | $25.730 |
| 500+ | $24.780 |
| 1000+ | $23.720 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$34.15
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSH68N65DM6AG
Newark Part No.11AN9215
Channel TypeDual N Channel
Drain Source Voltage Vds N Channel650V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel64A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.041ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleACEPACK SMIT
No. of Pins9Pins
Power Dissipation N Channel379W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
QualificationAQG-324
SVHCNo SVHC (05-Nov-2025)
Technical Specifications
Channel Type
Dual N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
9Pins
Power Dissipation P Channel
-
Product Range
-
SVHC
No SVHC (05-Nov-2025)
Drain Source Voltage Vds N Channel
650V
Continuous Drain Current Id N Channel
64A
Drain Source On State Resistance N Channel
0.041ohm
Transistor Case Style
ACEPACK SMIT
Power Dissipation N Channel
379W
Operating Temperature Max
150°C
Qualification
AQG-324
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (05-Nov-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability