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SCT040H120G3AG
Silicon Carbide MOSFET, Single, N Channel, 40 A, 1.2 kV, 0.054 ohm, H2PAK
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCT040H120G3AGCopy
Manufacturer Standard Lead Time8 weeks
Newark Part No.
Re-Reel04AM0272RL
Cut Tape04AM0272
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 8 week(s)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $13.120 | $13.12 |
| Total Price | $13.12 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $13.120 |
| 10+ | $9.830 |
| 25+ | $9.330 |
| 50+ | $8.880 |
| 100+ | $8.460 |
| 250+ | $8.140 |
| 500+ | $7.880 |
| 1000+ | $7.700 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCT040H120G3AGCopy
Manufacturer Standard Lead Time8 weeks
Newark Part No.
Re-Reel04AM0272RL
Cut Tape04AM0272
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id40A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.054ohm
Transistor Case StyleH2PAK
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.2V
Power Dissipation300W
Operating Temperature Max175°C
Product Range-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
40A
Drain Source On State Resistance
0.054ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
4.2V
Operating Temperature Max
175°C
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
H2PAK
Rds(on) Test Voltage
18V
Power Dissipation
300W
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate