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SCT016H120G3AG
SIC MOSFET, N-CH, 1.2KV, 112A, H2PAK-7
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCT016H120G3AGCopy
Manufacturer Standard Lead Time61 weeks
Newark Part No.
Re-Reel22AM0334RL
Cut Tape22AM0334
Your Part Number
10 In Stock
Need more?
Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $25.930 | $25.93 |
| Total Price | $25.93 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $25.930 |
| 10+ | $18.770 |
| 25+ | $18.760 |
| 50+ | $18.740 |
| 100+ | $18.730 |
| 500+ | $18.720 |
| 1000+ | $17.490 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCT016H120G3AGCopy
Manufacturer Standard Lead Time61 weeks
Newark Part No.
Re-Reel22AM0334RL
Cut Tape22AM0334
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id112A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.022ohm
Transistor Case StyleH2PAK
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.2V
Power Dissipation652W
Operating Temperature Max175°C
Product Range-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
112A
Drain Source On State Resistance
0.022ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
4.2V
Operating Temperature Max
175°C
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
H2PAK
Rds(on) Test Voltage
18V
Power Dissipation
652W
Product Range
-
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate