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SCT012W90G3-4AG
Silicon Carbide MOSFET, Single, N Channel, 110 A, 900 V, 0.0158 ohm, HiP247
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCT012W90G3-4AG
Newark Part No.16AM9218
Your Part Number
25 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $45.140 |
| 5+ | $44.000 |
| 10+ | $42.900 |
Price for:Each
Minimum: 1
Multiple: 1
$45.14
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCT012W90G3-4AG
Newark Part No.16AM9218
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id110A
Drain Source Voltage Vds900V
Drain Source On State Resistance0.0158ohm
Transistor Case StyleHiP247
No. of Pins4Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.2V
Power Dissipation625W
Operating Temperature Max200°C
Product Range-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
110A
Drain Source On State Resistance
0.0158ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
4.2V
Operating Temperature Max
200°C
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
900V
Transistor Case Style
HiP247
Rds(on) Test Voltage
18V
Power Dissipation
625W
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
