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BU508AF
Bipolar (BJT) Single Transistor, NPN, 700 V, 8 A, 50 W, ISOWATT-218, Through Hole
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoBU508AF
Newark Part No.09R3318
Your Part Number
Technical Datasheet
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoBU508AF
Newark Part No.09R3318
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo700V
Collector Emitter Voltage Max700V
Continuous Collector Current8A
Transition Frequency-
Power Dissipation Pd50W
Power Dissipation50W
DC Collector Current8A
DC Current Gain hFE30hFE
Transistor MountingThrough Hole
No. of Pins3Pins
Transistor Case StyleISOWATT-218
DC Current Gain hFE Min30hFE
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
700V
Transition Frequency
-
Power Dissipation
50W
DC Current Gain hFE
30hFE
No. of Pins
3Pins
DC Current Gain hFE Min
30hFE
Qualification
-
MSL
-
Collector Emitter Voltage V(br)ceo
700V
Continuous Collector Current
8A
Power Dissipation Pd
50W
DC Collector Current
8A
Transistor Mounting
Through Hole
Transistor Case Style
ISOWATT-218
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (15-Jan-2018)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate