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GD900HFY120P1S
TRANSISTOR, IGBT MODULE, 1.2KV, 1.522KA ROHS COMPLIANT: YES
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTARPOWER
Manufacturer Part NoGD900HFY120P1S
Newark Part No.84AH5756
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 29 week(s)
| Quantity | Price |
|---|---|
| 1+ | $443.930 |
| 6+ | $439.410 |
| 12+ | $435.030 |
| 27+ | $417.320 |
Price for:Each
Minimum: 1
Multiple: 1
$443.93
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTARPOWER
Manufacturer Part NoGD900HFY120P1S
Newark Part No.84AH5756
Technical Datasheet
IGBT ConfigurationHalf Bridge
Continuous Collector Current1.522kA
DC Collector Current1.522kA
Collector Emitter Saturation Voltage Vce(on)1.7V
Collector Emitter Saturation Voltage1.7V
Power Dissipation5.24kW
Power Dissipation Pd5.24kW
Operating Temperature Max150°C
Junction Temperature, Tj Max150°C
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case StyleModule
IGBT TerminationStud
Collector Emitter Voltage Max1.2kV
IGBT TechnologyTrench Field Stop
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
IGBT Configuration
Half Bridge
DC Collector Current
1.522kA
Collector Emitter Saturation Voltage
1.7V
Power Dissipation Pd
5.24kW
Junction Temperature, Tj Max
150°C
Transistor Case Style
Module
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
To Be Advised
Continuous Collector Current
1.522kA
Collector Emitter Saturation Voltage Vce(on)
1.7V
Power Dissipation
5.24kW
Operating Temperature Max
150°C
Collector Emitter Voltage V(br)ceo
1.2kV
IGBT Termination
Stud
IGBT Technology
Trench Field Stop
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate