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SKM400GB17E4
IGBT Module, Half Bridge, 430 A, 2 V, 150 °C, Module
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSEMIKRON
Manufacturer Part NoSKM400GB17E4
Newark Part No.86W0695
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 26 week(s)
| Quantity | Price |
|---|---|
| 10+ | $366.640 |
| 25+ | $345.540 |
Price for:Each
Minimum: 12
Multiple: 12
$4,399.68
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSEMIKRON
Manufacturer Part NoSKM400GB17E4
Newark Part No.86W0695
Technical Datasheet
IGBT ConfigurationHalf Bridge
Transistor PolarityDual NPN
DC Collector Current430A
Continuous Collector Current430A
Collector Emitter Saturation Voltage2V
Collector Emitter Saturation Voltage Vce(on)2V
Power Dissipation-
Power Dissipation Pd-
Collector Emitter Voltage V(br)ceo1.7kV
Operating Temperature Max150°C
Junction Temperature, Tj Max150°C
Transistor Case StyleModule
No. of Pins11Pins
IGBT TerminationStud
IGBT TechnologyIGBT 4 [Trench]
Collector Emitter Voltage Max1.7kV
Transistor MountingPanel
Product Range-
SVHCNo SVHC (15-Jun-2015)
Technical Specifications
IGBT Configuration
Half Bridge
DC Collector Current
430A
Collector Emitter Saturation Voltage
2V
Power Dissipation
-
Collector Emitter Voltage V(br)ceo
1.7kV
Junction Temperature, Tj Max
150°C
No. of Pins
11Pins
IGBT Technology
IGBT 4 [Trench]
Transistor Mounting
Panel
SVHC
No SVHC (15-Jun-2015)
Transistor Polarity
Dual NPN
Continuous Collector Current
430A
Collector Emitter Saturation Voltage Vce(on)
2V
Power Dissipation Pd
-
Operating Temperature Max
150°C
Transistor Case Style
Module
IGBT Termination
Stud
Collector Emitter Voltage Max
1.7kV
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jun-2015)
Download Product Compliance Certificate
Product Compliance Certificate