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SK 100 GBGM 12T4 T I
IGBT Module, 100 A, 1.85 V, 175 °C, Module
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ManufacturerSEMIKRON
Manufacturer Part NoSK 100 GBGM 12T4 T I
Newark Part No.86W0625
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 26 week(s)
Product Information
ManufacturerSEMIKRON
Manufacturer Part NoSK 100 GBGM 12T4 T I
Newark Part No.86W0625
Technical Datasheet
IGBT Configuration-
Transistor PolarityDual NPN
DC Collector Current100A
Continuous Collector Current100A
Collector Emitter Saturation Voltage1.85V
Collector Emitter Saturation Voltage Vce(on)1.85V
Power Dissipation Pd-
Power Dissipation-
Operating Temperature Max175°C
Collector Emitter Voltage V(br)ceo1.2kV
Junction Temperature, Tj Max175°C
Transistor Case StyleModule
IGBT TerminationPress Fit
No. of Pins36Pins
IGBT Technology-
Collector Emitter Voltage Max1.2kV
Transistor MountingPanel
Product Range-
SVHCNo SVHC (15-Jun-2015)
Technical Specifications
IGBT Configuration
-
DC Collector Current
100A
Collector Emitter Saturation Voltage
1.85V
Power Dissipation Pd
-
Operating Temperature Max
175°C
Junction Temperature, Tj Max
175°C
IGBT Termination
Press Fit
IGBT Technology
-
Transistor Mounting
Panel
SVHC
No SVHC (15-Jun-2015)
Transistor Polarity
Dual NPN
Continuous Collector Current
100A
Collector Emitter Saturation Voltage Vce(on)
1.85V
Power Dissipation
-
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Case Style
Module
No. of Pins
36Pins
Collector Emitter Voltage Max
1.2kV
Product Range
-
Technical Docs (1)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jun-2015)
Download Product Compliance Certificate
Product Compliance Certificate