Print Page
SEMIX703GB126HDS
IGBT Module, Half Bridge, 642 A, 2.1 V, 150 °C, SEMiX 3s
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 28 week(s)
| Quantity | Price |
|---|---|
| 5+ | $321.620 |
| 10+ | $317.050 |
| 25+ | $298.810 |
Price for:Each
Minimum: 6
Multiple: 6
$1,929.72
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSEMIKRON
Manufacturer Part NoSEMIX703GB126HDS
Newark Part No.16M0127
Technical Datasheet
Transistor PolarityN Channel
IGBT ConfigurationHalf Bridge
DC Collector Current642A
Continuous Collector Current642A
Collector Emitter Saturation Voltage2.1V
Collector Emitter Saturation Voltage Vce(on)1.2kV
Power Dissipation Pd-
Power Dissipation-
Operating Temperature Max150°C
Collector Emitter Voltage V(br)ceo1.2V
Junction Temperature, Tj Max150°C
Transistor Case StyleSEMiX 3s
IGBT TerminationStud
No. of Pins7Pins
IGBT TechnologyIGBT 3 [Trench]
Collector Emitter Voltage Max1.2V
Transistor MountingPanel
Product Range-
SVHCNo SVHC (15-Jun-2015)
Technical Specifications
Transistor Polarity
N Channel
DC Collector Current
642A
Collector Emitter Saturation Voltage
2.1V
Power Dissipation Pd
-
Operating Temperature Max
150°C
Junction Temperature, Tj Max
150°C
IGBT Termination
Stud
IGBT Technology
IGBT 3 [Trench]
Transistor Mounting
Panel
SVHC
No SVHC (15-Jun-2015)
IGBT Configuration
Half Bridge
Continuous Collector Current
642A
Collector Emitter Saturation Voltage Vce(on)
1.2kV
Power Dissipation
-
Collector Emitter Voltage V(br)ceo
1.2V
Transistor Case Style
SEMiX 3s
No. of Pins
7Pins
Collector Emitter Voltage Max
1.2V
Product Range
-
Technical Docs (2)
Alternatives for SEMIX703GB126HDS
1 Product Found
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jun-2015)
Download Product Compliance Certificate
Product Compliance Certificate