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G3F45MT06D
Silicon Carbide MOSFET, N Channel, 650 V, 42 mohm, TO-247
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 22 week(s)
| Quantity | Price |
|---|---|
| 500+ | $10.160 |
Price for:Each (Supplied on Cut Tape)
Minimum: 600
Multiple: 600
$6,096.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerGENESIC
Manufacturer Part NoG3F45MT06DCopy
Newark Part No.18AM4814
Technical Datasheet
MOSFET Module Configuration-
Channel TypeN Channel
Continuous Drain Current Id-
Drain Source Voltage Vds650V
Drain Source On State Resistance42mohm
Transistor Case StyleTO-247
No. of Pins3Pins
Rds(on) Test Voltage-
Gate Source Threshold Voltage Max-
Power Dissipation-
Operating Temperature Max-
Product Range-
SVHCNo SVHC (17-Dec-2015)
Technical Specifications
MOSFET Module Configuration
-
Continuous Drain Current Id
-
Drain Source On State Resistance
42mohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
-
Operating Temperature Max
-
SVHC
No SVHC (17-Dec-2015)
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
TO-247
Rds(on) Test Voltage
-
Power Dissipation
-
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:To be advised
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate