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G3F09MT12G3T
SIC MOSFET, N-CH, 1.2KV, MODULE
Image is for illustrative purposes only. Please refer to product description.
ManufacturerGENESIC
Manufacturer Part NoG3F09MT12G3T
Newark Part No.39AM8766
Product RangeSiCPAK G Series
Your Part Number
Technical Datasheet
48 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $255.680 |
| 5+ | $251.890 |
| 10+ | $248.200 |
| 25+ | $233.310 |
Price for:Each
Minimum: 1
Multiple: 1
$255.68
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Product Information
ManufacturerGENESIC
Manufacturer Part NoG3F09MT12G3T
Newark Part No.39AM8766
Product RangeSiCPAK G Series
Technical Datasheet
MOSFET Module ConfigurationThree Level Inverter
Channel TypeN Channel
Continuous Drain Current Id-
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance9300µohm
Transistor Case StyleModule
No. of Pins-
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max-
Power Dissipation-
Operating Temperature Max-
Product RangeSiCPAK G Series
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
MOSFET Module Configuration
Three Level Inverter
Continuous Drain Current Id
-
Drain Source On State Resistance
9300µohm
No. of Pins
-
Gate Source Threshold Voltage Max
-
Operating Temperature Max
-
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
Module
Rds(on) Test Voltage
18V
Power Dissipation
-
Product Range
SiCPAK G Series
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate