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G2R1000MT17D
Silicon Carbide MOSFET, Single, N Channel, 4 A, 1.7 kV, 1 ohm, TO-247
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ManufacturerGENESIC
Manufacturer Part NoG2R1000MT17D
Newark Part No.89AH0972
Product RangeG2R Series
Your Part Number
Technical Datasheet
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Product Information
ManufacturerGENESIC
Manufacturer Part NoG2R1000MT17D
Newark Part No.89AH0972
Product RangeG2R Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id4A
Drain Source Voltage Vds1.7kV
Drain Source On State Resistance1ohm
On Resistance Rds(on)1ohm
Transistor Case StyleTO-247
No. of Pins3Pins
Power Dissipation Pd53W
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max4V
Power Dissipation53W
Operating Temperature Max175°C
Product RangeG2R Series
SVHCLead
Technical Specifications
MOSFET Module Configuration
Single
Transistor Polarity
N Channel
Drain Source Voltage Vds
1.7kV
On Resistance Rds(on)
1ohm
No. of Pins
3Pins
Rds(on) Test Voltage
20V
Power Dissipation
53W
Product Range
G2R Series
Channel Type
N Channel
Continuous Drain Current Id
4A
Drain Source On State Resistance
1ohm
Transistor Case Style
TO-247
Power Dissipation Pd
53W
Gate Source Threshold Voltage Max
4V
Operating Temperature Max
175°C
SVHC
Lead
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability