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BST70B2P4K01-VC
MOSFET, FOUR N-CH, 1.2KV, 70A, HSDIP ROHS COMPLIANT: YES
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| Quantity | Price |
|---|---|
| 1+ | $122.930 |
| 5+ | $120.630 |
| 10+ | $118.240 |
| 25+ | $117.030 |
| 50+ | $115.870 |
| 120+ | $111.150 |
Price for:Each
Minimum: 1
Multiple: 1
$122.93
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerROHM
Manufacturer Part NoBST70B2P4K01-VC
Newark Part No.95AM9532
MOSFET Module ConfigurationFull Bridge
Channel TypeFour N Channel
Continuous Drain Current Id70A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.025ohm
Transistor Case StyleHSDIP
No. of Pins20Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.8V
Power Dissipation385W
Operating Temperature Max175°C
Product Range-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
MOSFET Module Configuration
Full Bridge
Continuous Drain Current Id
70A
Drain Source On State Resistance
0.025ohm
No. of Pins
20Pins
Gate Source Threshold Voltage Max
4.8V
Operating Temperature Max
175°C
SVHC
No SVHC (25-Jun-2025)
Channel Type
Four N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
HSDIP
Rds(on) Test Voltage
18V
Power Dissipation
385W
Product Range
-
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability