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BSM180D12P2E002
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 204 A, 1.2 kV, Module
Image is for illustrative purposes only. Please refer to product description.
ManufacturerROHM
Manufacturer Part NoBSM180D12P2E002
Newark Part No.88AH6160
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 39 week(s)
| Quantity | Price |
|---|---|
| 1+ | $696.800 |
Price for:Each
Minimum: 1
Multiple: 1
$696.80
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerROHM
Manufacturer Part NoBSM180D12P2E002
Newark Part No.88AH6160
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Transistor PolarityDual N Channel
Channel TypeDual N Channel
Continuous Drain Current Id204A
Drain Source Voltage Vds1.2kV
On Resistance Rds(on)-
Drain Source On State Resistance-
Transistor Case StyleModule
No. of Pins-
Power Dissipation Pd1.36kW
Rds(on) Test Voltage-
Gate Source Threshold Voltage Max4V
Power Dissipation1.36kW
Operating Temperature Max150°C
Product Range-
SVHCTo Be Advised
Product Overview
BSM180D12P2E002 is a SiC power module. This product is a chopper module consisting of SiC-DMOSFET and SiC-SBD from ROHM. Application includes motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.
- Low surge, low switching loss, high-speed switching possible
- Reduced temperature dependence
- 1.6V drain source voltage (Tj= 25°C, VGS=0V, IS=180A)
- 1.6 to 4V gate-source voltage range (VDS=10V, ID=35.2mA)
- 204A drain current DC (Tc=60°C), 204A source current
- 2.2V typical static drain-source on-state voltage (Tj=25°C, ID180A, VGS=18V)
- 3.2mA maximum drain cut off current (VDS=1200V, VGS=0V)
- 0.5µA maximum gate-source leakage current (VGS=22V, VDS=0V)
- 45ns typical switching characteristics (VGS(on)=18V, VGS(off)=0V)
- Operating junction temperature range from -40 to 150°C
Technical Specifications
MOSFET Module Configuration
Half Bridge
Channel Type
Dual N Channel
Drain Source Voltage Vds
1.2kV
Drain Source On State Resistance
-
No. of Pins
-
Rds(on) Test Voltage
-
Power Dissipation
1.36kW
Product Range
-
Transistor Polarity
Dual N Channel
Continuous Drain Current Id
204A
On Resistance Rds(on)
-
Transistor Case Style
Module
Power Dissipation Pd
1.36kW
Gate Source Threshold Voltage Max
4V
Operating Temperature Max
150°C
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability