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CM100TX-24S
IGBT Module, 100 A, 1.2 kV, 750 W, 150 °C, Module
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Delivery estimated post order confirmations.You will be charged on dispatch.
| Quantity | Price |
|---|---|
| 10+ | $139.830 |
| 25+ | $131.420 |
Price for:Each
Minimum: 10
Multiple: 1
$1,398.30
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Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM100TX-24S
Newark Part No.79R2383
IGBT Configuration-
Transistor PolarityN Channel
DC Collector Current100A
Continuous Collector Current100A
Collector Emitter Saturation Voltage1.2kV
Collector Emitter Saturation Voltage Vce(on)1.2kV
Power Dissipation750W
Power Dissipation Pd750W
Operating Temperature Max150°C
Junction Temperature, Tj Max150°C
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case StyleModule
IGBT TerminationPress Fit
No. of Pins35Pins
IGBT Technology-
Collector Emitter Voltage Max1.2kV
Product Range-
SVHCTo Be Advised
Technical Specifications
IGBT Configuration
-
DC Collector Current
100A
Collector Emitter Saturation Voltage
1.2kV
Power Dissipation
750W
Operating Temperature Max
150°C
Collector Emitter Voltage V(br)ceo
1.2kV
IGBT Termination
Press Fit
IGBT Technology
-
Product Range
-
Transistor Polarity
N Channel
Continuous Collector Current
100A
Collector Emitter Saturation Voltage Vce(on)
1.2kV
Power Dissipation Pd
750W
Junction Temperature, Tj Max
150°C
Transistor Case Style
Module
No. of Pins
35Pins
Collector Emitter Voltage Max
1.2kV
SVHC
To Be Advised
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate