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RFD3055LE
Power MOSFET, N Channel, 60 V, 11 A, 0.107 ohm, TO-251AA, Through Hole
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No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoRFD3055LECopy
Newark Part No.58K2124
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id11A
Drain Source On State Resistance0.107ohm
On Resistance Rds(on)0.107ohm
Transistor MountingThrough Hole
Power Dissipation Pd38W
Rds(on) Test Voltage5V
Gate Source Threshold Voltage Max3V
Transistor Case StyleTO-251AA
Power Dissipation38W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
The RFD3055LE is a N-channel enhancement-mode Power MOSFETs manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching converters and relay drivers. It can be operated directly from integrated circuits.
- Temperature compensating PSPICE® model
- Peak current vs. pulse width curve
- UIS Rating curve
Applications
Power Management, Motor Drive & Control, Industrial
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.107ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
5V
Transistor Case Style
TO-251AA
No. of Pins
3Pins
Qualification
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
11A
On Resistance Rds(on)
0.107ohm
Power Dissipation Pd
38W
Gate Source Threshold Voltage Max
3V
Power Dissipation
38W
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead
Technical Docs (3)
Legislation and Environmental
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability
