Print Page
Image is for illustrative purposes only. Please refer to product description.
No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTP5864NG
Newark Part No.52T8339
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id63A
On Resistance Rds(on)0.0102ohm
Drain Source On State Resistance0.0102ohm
Transistor MountingThrough Hole
Power Dissipation Pd107W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Transistor Case StyleTO-220
Power Dissipation107W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
MSL-
SVHCLead
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.0102ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Transistor Case Style
TO-220
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
63A
Drain Source On State Resistance
0.0102ohm
Power Dissipation Pd
107W
Gate Source Threshold Voltage Max
4V
Power Dissipation
107W
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate