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NTMT045N065SC1
Silicon Carbide MOSFET, N Channel, 55 A, 650 V, 0.05 ohm, TDFN
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNTMT045N065SC1Copy
Manufacturer Standard Lead Time19 weeks
Newark Part No.
Re-Reel57AK6421RL
Cut Tape57AK6421
Product RangeEliteSiC Series
Your Part Number
342 In Stock
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $11.320 | $11.32 |
| Total Price | $11.32 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $11.320 |
| 50+ | $7.620 |
| 100+ | $7.500 |
| 250+ | $6.900 |
| 500+ | $6.590 |
| 1000+ | $6.460 |
| 2500+ | $6.330 |
| 5000+ | $6.190 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTMT045N065SC1Copy
Manufacturer Standard Lead Time19 weeks
Newark Part No.
Re-Reel57AK6421RL
Cut Tape57AK6421
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module Configuration-
Channel TypeN Channel
Continuous Drain Current Id55A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.05ohm
Transistor Case StyleTDFN
No. of Pins4Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.3V
Power Dissipation187W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCLead (25-Jun-2025)
Technical Specifications
MOSFET Module Configuration
-
Continuous Drain Current Id
55A
Drain Source On State Resistance
0.05ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
4.3V
Operating Temperature Max
175°C
SVHC
Lead (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
TDFN
Rds(on) Test Voltage
18V
Power Dissipation
187W
Product Range
EliteSiC Series
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
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