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NTJD4105CT2G
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 630 mA, 630 mA, 0.29 ohm
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ManufacturerONSEMI
Manufacturer Part NoNTJD4105CT2G
Newark Part No.
Full Reel88H5114
Re-Reel13AC3885
Cut Tape13AC3885
Your Part Number
3 In Stock
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Order before 8pm EST standard shipping
Available in quantity shown
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $0.028 | $0.03 |
| Total Price | $0.03 | ||
Cut Tape & Re-Reel
| Quantity | Price | Promotional price |
|---|---|---|
| 1+ | $0.411 | $0.028 |
| 10+ | $0.263 | $0.028 |
| 25+ | $0.233 | $0.028 |
| 50+ | $0.203 | $0.028 |
| 100+ | $0.173 | $0.028 |
| 250+ | $0.154 | $0.028 |
Full Reel
| Quantity | Price |
|---|---|
| 6000+ | $0.096 |
| 12000+ | $0.088 |
| 18000+ | $0.083 |
| 30000+ | $0.077 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTJD4105CT2G
Newark Part No.
Full Reel88H5114
Re-Reel13AC3885
Cut Tape13AC3885
Technical Datasheet
Channel TypeComplementary N and P Channel
Continuous Drain Current Id630mA
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id N Channel630mA
Continuous Drain Current Id P Channel630mA
Drain Source On State Resistance N Channel0.29ohm
Drain Source On State Resistance P Channel0.29ohm
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel270mW
Power Dissipation P Channel270mW
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
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Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds
20V
Continuous Drain Current Id P Channel
630mA
Drain Source On State Resistance P Channel
0.29ohm
No. of Pins
6Pins
Power Dissipation P Channel
270mW
Product Range
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
630mA
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
630mA
Drain Source On State Resistance N Channel
0.29ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
270mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
