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NTJD4105CT2G
MOSFET, N/P-CH, 20 V, 0.63A, SOT-363
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ManufacturerONSEMI
Manufacturer Part NoNTJD4105CT2G
Newark Part No.13AC3885
Your Part Number
Technical Datasheet
3 In Stock
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Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $0.028 |
| 10+ | $0.028 |
| 25+ | $0.028 |
| 50+ | $0.028 |
| 100+ | $0.028 |
| 250+ | $0.028 |
| 500+ | $0.028 |
| 1000+ | $0.028 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTJD4105CT2G
Newark Part No.13AC3885
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id630mA
Drain Source Voltage Vds P Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id N Channel630mA
Continuous Drain Current Id P Channel630mA
Drain Source On State Resistance N Channel0.29ohm
Drain Source On State Resistance P Channel0.29ohm
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel270mW
Power Dissipation P Channel270mW
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
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Technical Specifications
Channel Type
Complementary N and P Channel
Continuous Drain Current Id
630mA
Drain Source Voltage Vds
20V
Continuous Drain Current Id P Channel
630mA
Drain Source On State Resistance P Channel
0.29ohm
No. of Pins
6Pins
Power Dissipation P Channel
270mW
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
630mA
Drain Source On State Resistance N Channel
0.29ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
270mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (1)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
WARNINGProposition 65