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NTH4L060N090SC1
Silicon Carbide MOSFET, Single, N Channel, 66.9 A, 900 V, 0.0531 ohm, TO-247
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ManufacturerONSEMI
Manufacturer Part NoNTH4L060N090SC1
Newark Part No.81AJ0237
Product RangeEliteSiC Series
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $7.580 |
| 10+ | $7.580 |
| 25+ | $7.580 |
| 60+ | $7.580 |
| 120+ | $7.580 |
| 270+ | $7.580 |
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Multiple: 1
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTH4L060N090SC1
Newark Part No.81AJ0237
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id66.9A
Drain Source Voltage Vds900V
Drain Source On State Resistance0.0531ohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage15V
Gate Source Threshold Voltage Max2.09V
Power Dissipation320W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
66.9A
Drain Source On State Resistance
0.0531ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
2.09V
Operating Temperature Max
175°C
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
900V
Transistor Case Style
TO-247
Rds(on) Test Voltage
15V
Power Dissipation
320W
Product Range
EliteSiC Series
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
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Product Compliance Certificate
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