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NTBG014N120M3P
Silicon Carbide MOSFET, Single, N Channel, 104 A, 1.2 kV, 0.014 ohm, TO-263 (D2PAK)
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ManufacturerONSEMI
Manufacturer Part NoNTBG014N120M3P
Newark Part No.65AK6014
Product RangeEliteSiC Series
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $37.760 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTBG014N120M3P
Newark Part No.65AK6014
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id104A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.014ohm
Transistor Case StyleTO-263 (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.63V
Power Dissipation227W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
104A
Drain Source On State Resistance
0.014ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
4.63V
Operating Temperature Max
175°C
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
18V
Power Dissipation
227W
Product Range
EliteSiC Series
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
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