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NID6002NT4G
Power MOSFET, N Channel, 60 V, 11 A, 0.21 ohm, TO-252 (DPAK), Surface Mount
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ManufacturerONSEMI
Manufacturer Part NoNID6002NT4G
Newark Part No.83K8655
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 53 week(s)
Product Information
ManufacturerONSEMI
Manufacturer Part NoNID6002NT4G
Newark Part No.83K8655
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id11A
On Resistance Rds(on)0.21ohm
Drain Source On State Resistance0.21ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd2.5W
Gate Source Threshold Voltage Max1.85V
Power Dissipation2.5W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.21ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.85V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
11A
Drain Source On State Resistance
0.21ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
2.5W
Power Dissipation
2.5W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate