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NID6002NT4G
Power MOSFET, N Channel, 60 V, 11 A, 0.21 ohm, TO-252 (DPAK), Surface Mount
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ManufacturerONSEMI
Manufacturer Part NoNID6002NT4G
Newark Part No.
Re-Reel09R9604
Cut Tape09R9604
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 36 week(s)
Packaging Options
Product Information
ManufacturerONSEMI
Manufacturer Part NoNID6002NT4G
Newark Part No.
Re-Reel09R9604
Cut Tape09R9604
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id11A
Drain Source On State Resistance0.21ohm
On Resistance Rds(on)0.21ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd2.5W
Gate Source Threshold Voltage Max1.85V
Power Dissipation2.5W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.21ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.85V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
11A
On Resistance Rds(on)
0.21ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
2.5W
Power Dissipation
2.5W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (1)
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3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate