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NDC7002N
Dual MOSFET, N Channel, 50 V, 510 mA, 2 ohm
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ManufacturerONSEMI
Manufacturer Part NoNDC7002N
Newark Part No.
Re-Reel79K5296
Cut Tape79K5296
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $0.700 |
| 10+ | $0.436 |
| 25+ | $0.384 |
| 50+ | $0.332 |
| 100+ | $0.280 |
| 250+ | $0.247 |
| 500+ | $0.213 |
| 1000+ | $0.188 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNDC7002N
Newark Part No.
Re-Reel79K5296
Cut Tape79K5296
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel50V
Continuous Drain Current Id510mA
Drain Source Voltage Vds P Channel-
Drain Source Voltage Vds50V
Continuous Drain Current Id N Channel510mA
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel2ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSuperSOT
No. of Pins6Pins
Power Dissipation N Channel700mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Alternatives for NDC7002N
1 Product Found
Product Overview
The NDC7002N is a dual N-channel enhancement-mode FET produced using high cell density and DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. This device is particularly suited for low voltage applications requiring a low current high side switch.
- High saturation current
- High density cell design for low RDS (ON)
- Design using copper lead-frame for superior thermal and electrical capabilities
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
510mA
Drain Source Voltage Vds
50V
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
50V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
510mA
Drain Source On State Resistance N Channel
2ohm
Transistor Case Style
SuperSOT
Power Dissipation N Channel
700mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
WARNINGProposition 65