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MTB2P50ET4G
Power MOSFET, P Channel, 500 V, 2 A, 6 ohm, TO-263 (D2PAK), Surface Mount
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No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoMTB2P50ET4G
Newark Part No.09R9555
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id2A
Drain Source On State Resistance6ohm
On Resistance Rds(on)6ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Power Dissipation Pd75W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation75W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCTo Be Advised
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
500V
Drain Source On State Resistance
6ohm
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
75W
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
2A
On Resistance Rds(on)
6ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
75W
Operating Temperature Max
150°C
Product Range
-
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate