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MPS651G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 60 V, 2 A, 625 mW, TO-92, Through Hole
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No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoMPS651G
Newark Part No.45J1676
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo60V
Collector Emitter Voltage Max60V
Continuous Collector Current2A
Power Dissipation625mW
Power Dissipation Pd625mW
DC Collector Current2A
DC Current Gain hFE75hFE
Transistor MountingThrough Hole
Transistor Case StyleTO-92
No. of Pins3Pins
Transition Frequency75MHz
DC Current Gain hFE Min75hFE
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
60V
Power Dissipation
625mW
DC Collector Current
2A
Transistor Mounting
Through Hole
No. of Pins
3Pins
DC Current Gain hFE Min
75hFE
Qualification
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage V(br)ceo
60V
Continuous Collector Current
2A
Power Dissipation Pd
625mW
DC Current Gain hFE
75hFE
Transistor Case Style
TO-92
Transition Frequency
75MHz
Operating Temperature Max
150°C
Product Range
-
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate