Print Page
MMBT589LT1G
Bipolar (BJT) Single Transistor, Low VCE(Sat), PNP, 30 V, 1 A, 310 mW, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoMMBT589LT1G
Newark Part No.
Full Reel31Y2784
Cut Tape83H7338
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 21 week(s)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 3000 | $0.177 | $531.00 |
| Total Price | $531.00 | ||
Cut Tape
| Quantity | Price |
|---|---|
| 500+ | $0.177 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.135 |
| 6000+ | $0.130 |
| 12000+ | $0.125 |
| 18000+ | $0.119 |
| 30000+ | $0.112 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoMMBT589LT1G
Newark Part No.
Full Reel31Y2784
Cut Tape83H7338
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo30V
Collector Emitter Voltage Max30V
Continuous Collector Current1A
DC Collector Current1A
Power Dissipation Pd310mW
Power Dissipation310mW
Transistor MountingSurface Mount
DC Current Gain hFE40hFE
Transistor Case StyleSOT-23
No. of Pins3Pins
Transition Frequency100MHz
DC Current Gain hFE Min40hFE
Operating Temperature Max150°C
QualificationAEC-Q101
Product Range-
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (27-Jun-2018)
Product Overview
MMBT589LT1G is a high current surface mount PNP silicon switching transistor for load management in portable applications.
- Collector-emitter voltage is -30VDC max (TA = 25°C)
- Collector-base voltage is -50VDC max (TA = 25°C)
- Emitter-base voltage is -5.0VDC max (TA = 25°C)
- Collector current - continuous is -1.0ADC max (TA = 25°C)
- Collector current - peak is -2.0A max (TA = 25°C)
- Total Device Dissipation FR-5 Board is 310mW max (TA = 25°C)
- Thermal resistance junction-to-ambient is 403°C/W max (TA = 25°C)
- Cutoff frequency is 100mHz min (IC = -100mA, VCE = -5.0V, f = 100MHz, TA = 25°C)
- SOT-23 package
- Junction temperature range from -55 to +150°C
Technical Specifications
Transistor Polarity
PNP
Collector Emitter Voltage Max
30V
DC Collector Current
1A
Power Dissipation
310mW
DC Current Gain hFE
40hFE
No. of Pins
3Pins
DC Current Gain hFE Min
40hFE
Qualification
AEC-Q101
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (27-Jun-2018)
Collector Emitter Voltage V(br)ceo
30V
Continuous Collector Current
1A
Power Dissipation Pd
310mW
Transistor Mounting
Surface Mount
Transistor Case Style
SOT-23
Transition Frequency
100MHz
Operating Temperature Max
150°C
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for MMBT589LT1G
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2018)
Download Product Compliance Certificate
Product Compliance Certificate