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MMBT3906LT1G
Bipolar (BJT) Single Transistor, General Purpose, PNP, 40 V, 200 mA, 225 mW, SOT-23, Surface Mount
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ManufacturerONSEMI
Manufacturer Part NoMMBT3906LT1GCopy
Manufacturer Standard Lead Time14 weeks
Newark Part No.
Full Reel94W9004
Re-Reel58M9148RL
Cut Tape58M9148
Product RangeMMBTxxxx Series
Your Part Number
37,519 In Stock
75,000 more incoming. You can reserve stock now
Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $0.151 | $0.15 |
| Total Price | $0.15 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.151 |
| 50+ | $0.093 |
| 100+ | $0.059 |
| 250+ | $0.052 |
| 500+ | $0.044 |
| 1000+ | $0.040 |
| 2500+ | $0.039 |
| 5000+ | $0.038 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.031 |
| 9000+ | $0.028 |
| 15000+ | $0.027 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoMMBT3906LT1GCopy
Manufacturer Standard Lead Time14 weeks
Newark Part No.
Full Reel94W9004
Re-Reel58M9148RL
Cut Tape58M9148
Product RangeMMBTxxxx Series
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max40V
Collector Emitter Voltage Max40V
Continuous Collector Current200mA
Continuous Collector Current200mA
Power Dissipation225mW
Power Dissipation225mW
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency250MHz
Transition Frequency250MHz
DC Current Gain hFE Min300hFE
DC Current Gain hFE Min30hFE
Operating Temperature Max150°C
Operating Temperature Max150°C
Product RangeMMBTxxxx Series
Product RangeMMBTxxxx
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Product Overview
MMBT3906LT1G is a PNP silicon general purpose transistor in a 3 pin SOT-23 package.
- Collector-emitter voltage is -40VDC
- Collector-base voltage is -40VDC
- Collector current - continuous is -200mA DC
- Total device dissipation is a 225mW
- Junction and storage temperature is -65 to +150°C
- 60 minimum DC current gain (IC = -0.1mAdc, VCE = -1.0Vdc)
- 250MHz typical current-gain bandwidth product (IC = -10mAdc, VCE = -20Vdc, f = 100MHz)
Technical Specifications
Transistor Polarity
PNP
Collector Emitter Voltage Max
40V
Continuous Collector Current
200mA
Power Dissipation
225mW
Transistor Mounting
Surface Mount
No. of Pins
3Pins
Transition Frequency
250MHz
DC Current Gain hFE Min
30hFE
Operating Temperature Max
150°C
Product Range
MMBTxxxx
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
40V
Continuous Collector Current
200mA
Power Dissipation
225mW
Transistor Case Style
SOT-23
Transistor Mounting
Surface Mount
Transition Frequency
250MHz
DC Current Gain hFE Min
300hFE
Operating Temperature Max
150°C
Product Range
MMBTxxxx Series
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate