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Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $2.090 |
| 10+ | $1.550 |
| 100+ | $1.010 |
| 500+ | $0.844 |
| 1000+ | $0.790 |
| 2500+ | $0.745 |
| 10000+ | $0.688 |
Price for:Each
Minimum: 1
Multiple: 1
$2.09
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJE13007G
Newark Part No.38K5604
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo400V
Collector Emitter Voltage Max400V
Continuous Collector Current8A
Power Dissipation Pd80W
Power Dissipation80W
DC Collector Current8A
Transistor Case StyleTO-220
DC Current Gain hFE4hFE
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency14MHz
DC Current Gain hFE Min4hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead
Alternatives for MJE13007G
1 Product Found
Product Overview
The MJE13007G is a Silicon NPN Bipolar Power Transistor designed for high voltage and high speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220V switch mode applications such as switching regulators, inverters, motor controls, solenoid/relay drivers and deflection circuits.
- SOA and switching applications
- Collector-base voltage (Vcbo = 700V)
- Emitter-base voltage (Vcbo = 9V)
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
400V
Power Dissipation Pd
80W
DC Collector Current
8A
DC Current Gain hFE
4hFE
No. of Pins
3Pins
DC Current Gain hFE Min
4hFE
Product Range
-
MSL
-
Collector Emitter Voltage V(br)ceo
400V
Continuous Collector Current
8A
Power Dissipation
80W
Transistor Case Style
TO-220
Transistor Mounting
Through Hole
Transition Frequency
14MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
