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KSD2012GTU
Bipolar (BJT) Single Transistor, NPN, 60 V, 3 A, 25 W, TO-220F, Through Hole
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| 1+ | $0.762 |
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Multiple: 1
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Product Information
ManufacturerONSEMI
Manufacturer Part NoKSD2012GTU
Newark Part No.46AC0935
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo60V
Collector Emitter Voltage Max60V
Continuous Collector Current3A
Power Dissipation Pd25W
Power Dissipation25W
Transistor Case StyleTO-220F
DC Collector Current3A
DC Current Gain hFE150hFE
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency3MHz
DC Current Gain hFE Min150hFE
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
60V
Power Dissipation Pd
25W
Transistor Case Style
TO-220F
DC Current Gain hFE
150hFE
No. of Pins
3Pins
DC Current Gain hFE Min
150hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage V(br)ceo
60V
Continuous Collector Current
3A
Power Dissipation
25W
DC Collector Current
3A
Transistor Mounting
Through Hole
Transition Frequency
3MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate