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ManufacturerONSEMI
Manufacturer Part NoFQT5P10TF
Newark Part No.15R3447
Your Part Number
Technical Datasheet
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQT5P10TF
Newark Part No.15R3447
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id1A
Drain Source On State Resistance1.05ohm
On Resistance Rds(on)0.82ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd2W
Transistor Case StyleSOT-223
Gate Source Threshold Voltage Max4V
Power Dissipation2W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
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1 Product Found
Product Overview
The FQT5P10TF is a -100V P-channel QFET® MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier, DC motor control and variable switching power applications.
- Low gate charge (typical 6.3nC)
- Low Crss (typical 18pF)
- 100% avalanche tested
- ±30V gate to source voltage
- 62.5°C/W thermal resistance, junction to ambient
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
1.05ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
2W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
1A
On Resistance Rds(on)
0.82ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOT-223
Power Dissipation
2W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (3)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability