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ManufacturerONSEMI
Manufacturer Part NoFQT4N20LTF
Newark Part No.31Y1563
Your Part Number
Technical Datasheet
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQT4N20LTF
Newark Part No.31Y1563
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id850mA
On Resistance Rds(on)1.1ohm
Drain Source On State Resistance1.1ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd2.2W
Gate Source Threshold Voltage Max2V
Power Dissipation2.2W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
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Product Overview
The FQT4N20LTF is a N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- Low level gate drive requirements allowing direct operation from logic drives
- 100% avalanche tested
- 4nC typical low gate charge
- 6pF typical low Crss
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
200V
On Resistance Rds(on)
1.1ohm
Transistor Case Style
SOT-223
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
850mA
Drain Source On State Resistance
1.1ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
2.2W
Power Dissipation
2.2W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate