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FQT4N20LTF
Power MOSFET, N Channel, 200 V, 850 mA, 1.1 ohm, SOT-223, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 21 week(s)
| Quantity | Price |
|---|---|
| 3000+ | $0.349 |
| 6000+ | $0.322 |
| 12000+ | $0.301 |
| 18000+ | $0.281 |
| 30000+ | $0.268 |
Price for:Each (Supplied on Full Reel)
Minimum: 4000
Multiple: 4000
$1,396.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQT4N20LTFCopy
Newark Part No.82C4372
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id850mA
Drain Source On State Resistance1.1ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation2.2W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
850mA
Transistor Case Style
SOT-223
Rds(on) Test Voltage
10V
Power Dissipation
2.2W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
200V
Drain Source On State Resistance
1.1ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (15-Jan-2018)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate