Print Page
FQP9N50C
Power MOSFET, Qfet, N Channel, 500 V, 9 A, 0.65 ohm, TO-220, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFQP9N50C
Newark Part No.84H4785
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 100 week(s)
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQP9N50C
Newark Part No.84H4785
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id9A
Drain Source On State Resistance0.65ohm
On Resistance Rds(on)0.65ohm
Transistor MountingThrough Hole
Power Dissipation Pd135W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Transistor Case StyleTO-220
Power Dissipation135W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
500V
Drain Source On State Resistance
0.65ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Transistor Case Style
TO-220
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
9A
On Resistance Rds(on)
0.65ohm
Power Dissipation Pd
135W
Gate Source Threshold Voltage Max
4V
Power Dissipation
135W
Operating Temperature Max
150°C
Product Range
-
SVHC
To Be Advised
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate