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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQP2N60CCopy
Newark Part No.97K0171
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id2A
On Resistance Rds(on)3.6ohm
Drain Source On State Resistance3.6ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd54W
Gate Source Threshold Voltage Max4V
Power Dissipation54W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (08-Jul-2021)
Product Overview
The FQP2N60C is a 600V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This device is well suited for high efficient switched mode power supplies, active power factor correction and electronic lamp ballast based on half bridge topology. This product is general usage and suitable for many different applications.
- Low gate charge
- 100% avalanche tested
- Improved system reliability in PFC and soft switching topologies
- Switching loss improvements
- Lower conduction loss
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
3.6ohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
2A
Drain Source On State Resistance
3.6ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
54W
Power Dissipation
54W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (08-Jul-2021)
Technical Docs (3)
Legislation and Environmental
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (08-Jul-2021)
Download Product Compliance Certificate
Product Compliance Certificate
