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FQD2N60CTM
Power MOSFET, N Channel, 600 V, 1.9 A, 3.6 ohm, TO-252AA, Surface Mount
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ManufacturerONSEMI
Manufacturer Part NoFQD2N60CTM
Newark Part No.31Y1527
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQD2N60CTM
Newark Part No.31Y1527
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id1.9A
On Resistance Rds(on)3.6ohm
Drain Source On State Resistance3.6ohm
Transistor Case StyleTO-252AA
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd44W
Gate Source Threshold Voltage Max4V
Power Dissipation44W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (08-Jul-2021)
Product Overview
The FQD2N60CTM is a N-channel QFET® enhancement-mode power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- Low gate charge (8.5nC)
- Low Crss (4.3pF)
- 100% avalanche tested
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
3.6ohm
Transistor Case Style
TO-252AA
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
1.9A
Drain Source On State Resistance
3.6ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
44W
Power Dissipation
44W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (08-Jul-2021)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (08-Jul-2021)
Download Product Compliance Certificate
Product Compliance Certificate