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FQD13N06LTM
MOSFET, N CH, 60V, 11A, TO-252AA-3
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFQD13N06LTM
Newark Part No.
Re-Reel31Y1522
Cut Tape31Y1522
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 17 week(s)
Packaging Options
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.577 |
| 10+ | $0.574 |
| 25+ | $0.544 |
| 50+ | $0.514 |
| 100+ | $0.484 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQD13N06LTM
Newark Part No.
Re-Reel31Y1522
Cut Tape31Y1522
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id11A
Drain Source On State Resistance0.092ohm
On Resistance Rds(on)0.092ohm
Transistor Case StyleTO-252AA
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd28W
Gate Source Threshold Voltage Max2.5V
Power Dissipation28W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
Product Overview
The FQD13N06LTM is a QFET® N-channel enhancement-mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
- Low level gate drive requirements allowing direct operation form logic drivers
- 100% avalanche tested
- 4.8nC typical low gate charge
- 17pF typical low Crss
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.092ohm
Transistor Case Style
TO-252AA
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
11A
On Resistance Rds(on)
0.092ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
28W
Power Dissipation
28W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
WARNINGProposition 65