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FQA55N25
Power MOSFET, N Channel, 250 V, 55 A, 0.04 ohm, TO-3P, Through Hole
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ManufacturerONSEMI
Manufacturer Part NoFQA55N25
Newark Part No.23M6299
Your Part Number
Technical Datasheet
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQA55N25
Newark Part No.23M6299
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id55A
Drain Source On State Resistance0.04ohm
On Resistance Rds(on)0.04ohm
Transistor Case StyleTO-3P
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd310W
Gate Source Threshold Voltage Max5V
Power Dissipation310W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (17-Jan-2022)
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Product Overview
The FQA55N25 is a N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- 100% avalanche tested
- 140nC typical low gate charge
- 125pF typical low Crss
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
55A
On Resistance Rds(on)
0.04ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
310W
Power Dissipation
310W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (17-Jan-2022)
Drain Source Voltage Vds
250V
Drain Source On State Resistance
0.04ohm
Transistor Case Style
TO-3P
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (17-Jan-2022)
Download Product Compliance Certificate
Product Compliance Certificate