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FQA28N15
Power MOSFET, N Channel, 150 V, 33 A, 0.067 ohm, TO-3P, Through Hole
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No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQA28N15
Newark Part No.58K8866
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id33A
On Resistance Rds(on)0.067ohm
Drain Source On State Resistance0.067ohm
Transistor MountingThrough Hole
Power Dissipation Pd227W
Rds(on) Test Voltage10V
Transistor Case StyleTO-3P
Gate Source Threshold Voltage Max4V
Power Dissipation227W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
The FQA28N15 is a 150V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, audio amplifier, DC motor control and variable switching power applications. This product is general usage and suitable for many different applications.
- Low gate charge
- 100% avalanche tested
- 175°C rated junction temperature
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
150V
On Resistance Rds(on)
0.067ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
33A
Drain Source On State Resistance
0.067ohm
Power Dissipation Pd
227W
Transistor Case Style
TO-3P
Power Dissipation
227W
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability
