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FDV304P
Power MOSFET, P Channel, 25 V, 460 mA, 1.1 ohm, SOT-23, Surface Mount
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ManufacturerONSEMI
Manufacturer Part NoFDV304PCopy
Manufacturer Standard Lead Time20 weeks
Newark Part No.
Re-Reel58K1480RL
Cut Tape58K1480
Your Part Number
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Re-Reel | 1 | $0.494 | $0.49 |
| Total Price | $0.49 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.494 |
| 50+ | $0.339 |
| 100+ | $0.225 |
| 250+ | $0.201 |
| 500+ | $0.176 |
| 1000+ | $0.160 |
| 2500+ | $0.152 |
| 5000+ | $0.130 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDV304PCopy
Manufacturer Standard Lead Time20 weeks
Newark Part No.
Re-Reel58K1480RL
Cut Tape58K1480
Technical Datasheet
Product Overview
The FDV303N is a surface mount, P channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been tailored to minimize the onstate resistance and maintain low gate drive conditions. It has excellent on state resistance even at gate drive voltages as low as 2.5V. FDV303N is designed for battery power applications such as notebook, cellular phones and computers.
- Very low level gate drive requirements allowing direct operation in 3V circuits
- Drain to source voltage (Vds) of -25V
- Gate to source voltage of -8V
- Continuous drain current (Id) of -460mA
- Power dissipation (pd) of 350mW
- Low on state resistance of 1.22ohm at Vgs -2.7V
- Operating temperature range from -55°C to 150°C
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
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Product Compliance Certificate