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FDS6890A
Dual MOSFET, N Channel, 20 V, 7.5 A, 0.013 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDS6890ACopy
Manufacturer Standard Lead Time23 weeks
Newark Part No.
Full Reel67R2078
Cut Tape78K5950
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 17 week(s)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 2500 | $0.824 | $2,060.00 |
| Total Price | $2,060.00 | ||
Cut Tape
| Quantity | Price |
|---|---|
| 2500+ | $0.824 |
Full Reel
| Quantity | Price |
|---|---|
| 2500+ | $0.880 |
| 3000+ | $0.852 |
| 6000+ | $0.792 |
| 12000+ | $0.732 |
| 18000+ | $0.712 |
| 30000+ | $0.700 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS6890ACopy
Manufacturer Standard Lead Time23 weeks
Newark Part No.
Full Reel67R2078
Cut Tape78K5950
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id7.5A
Drain Source Voltage Vds P Channel-
Drain Source Voltage Vds20V
Continuous Drain Current Id N Channel7.5A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.013ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The FDS6890A is a dual N-channel MOSFET produced using advanced PowerTrench™ process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance.
- Fast switching speed
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
- ±8V Gate to source voltage
- 7.5A Continuous drain current
- 20A Pulsed drain current
Applications
Industrial, Motor Drive & Control, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
7.5A
Drain Source Voltage Vds
20V
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
7.5A
Drain Source On State Resistance N Channel
0.013ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate