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FDS4480
Power MOSFET, N Channel, 40 V, 10.8 A, 0.008 ohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDS4480
Newark Part No.78K5931
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 8 week(s)
| Quantity | Price |
|---|---|
| 1+ | $0.751 |
| 3000+ | $0.728 |
| 6000+ | $0.678 |
| 12000+ | $0.628 |
| 18000+ | $0.611 |
| 30000+ | $0.601 |
Price for:Each (Supplied on Full Reel)
Minimum: 2500
Multiple: 2500
$1,877.50
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS4480
Newark Part No.78K5931
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id10.8A
Drain Source On State Resistance0.008ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.9V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
FDS4480 is a 40V N-channel power Trench® MOSFET. This N-channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. It is ideal for DC/DC converter application.
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
- Drain-source avalanche energy is 240mJ max at (single pulse, VDD=40V, ID=10.8A)
- Breakdown voltage temperature coefficient is 42mV/°C typ at (ID = 250mA, referenced to 25°C)
- Gate- body leakage, forward current is 100nA max at (VGS = 30V, VDS = 0V)
- Gate threshold voltage is 3.9V typ at (VDS = VGS, ID = 250mA)
- Static drain-source on–resistance is 8Mohm typ at (VGS = 10V, ID = 10.8A)
- Input capacitance is 1686pF typ at (VDS = 20V, V GS = 0V, f = 1.0MHz)
- Total gate charge is 29nC typ at (VDS = 20V, ID = 10.8A, VGS = 10V)
- Operating temperature range from -55°C to +175°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
10.8A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.008ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.9V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate