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FDS3590
Power MOSFET, N Channel, 80 V, 6.5 A, 0.039 ohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDS3590
Newark Part No.78K5928
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 21 week(s)
| Quantity | Price |
|---|---|
| 2500+ | $0.525 |
Price for:Each (Supplied on Full Reel)
Minimum: 2500
Multiple: 2500
$1,312.50
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS3590
Newark Part No.78K5928
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id6.5A
Drain Source On State Resistance0.039ohm
On Resistance Rds(on)0.032ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd2.5W
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max4V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDS3590 is a N-channel MOSFET produced using PowerTrench® process. It is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency.
- Low gate charge
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.039ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
2.5W
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
6.5A
On Resistance Rds(on)
0.032ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
Power Dissipation
2.5W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate